Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition Academic Article

abstract

• AbstractZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

authors

• Nastasi, Michael

published proceedings

• MRS Advances

author list (cited authors)

• Lee, S. Y., Li, Y., Lee, J., Lee, J. K., Nastasi, M., Crooker, S. A., ... Kang, J.

citation count

• 0

publication date

• 2003

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 34 Chemical Sciences
• 3406 Physical Chemistry
• 40 Engineering
• 4016 Materials Engineering
• 7 Affordable And Clean Energy

Digital Object Identifier (DOI)

• 10.1557/proc-764-c7.9

start page

• c7.9

volume

• 764

URL

• http://dx.doi.org/10.1557/proc-764-c7.9

user-defined tag

• 7 Affordable and Clean Energy