c-erbB-2 sensing using AlGaN/GaN high electron mobility transistors for breast cancer detection Academic Article uri icon

abstract

  • Antibody-functionalized, Au-gated AlGaNGaN high electron mobility transistors (HEMTs) were used to detect c-erbB-2, which is a breast cancer marker. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaNGaN HEMT drain-source current showed a rapid response of less than 5s when target c-erbB-2 antigen in a buffer at clinically relevant concentrations was added to the antibody-immobilized surface. We could detect a range of concentrations from 16.7to0.25gml. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaNGaN HEMTs for breast cancer screening.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Chen, K. H., Kang, B. S., Wang, H. T., Lele, T. P., Ren, F., Wang, Y. L., ... Linthicum, K. J.

citation count

  • 62

complete list of authors

  • Chen, KH||Kang, BS||Wang, HT||Lele, TP||Ren, F||Wang, YL||Chang, CY||Pearton, SJ||Dennis, DM||Johnson, JW||Rajagopal, P||Roberts, JC||Piner, EL||Linthicum, KJ

publication date

  • May 2008