Botulinum toxin detection using AlGaN/GaN high electron mobility transistors uri icon

abstract

  • Antibody-functionalized, Au-gated AlGaNGaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaNGaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ngml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaNGaN HEMTs for botulinum toxin detection.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Wang, Y., Chu, B. H., Chen, K. H., Chang, C. Y., Lele, T. P., Tseng, Y., ... Ren, F.

complete list of authors

  • Wang, Yu-Lin||Chu, BH||Chen, KH||Chang, CY||Lele, TP||Tseng, Y||Pearton, SJ||Ramage, J||Hooten, D||Dabiran, A||Chow, PP||Ren, F