Botulinum toxin detection using AlGaN/GaN high electron mobility transistors Academic Article uri icon

abstract

  • Antibody-functionalized, Au-gated AlGaNGaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaNGaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ngml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaNGaN HEMTs for botulinum toxin detection.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Wang, Y., Chu, B. H., Chen, K. H., Chang, C. Y., Lele, T. P., Tseng, Y., ... Ren, F.

citation count

  • 35

publication date

  • December 2008