Chemical Reactions at the in Vacuo Au/Inp Interface Academic Article uri icon

abstract

  • ABSTRACTThe reaction between a Au film and an Inp substrate occurs much more readily in vacuo than under an external pressure of an inert ga. At atmospheric pressure, the compounds Au2P3 and the γ intermetallic compound (at times designated Au7In3, Au9In4, or Au2In) are formed at 450 °C and remain fairly stable even when annealed at 500°C for hours. Under ultra-high vacuum conditions, phosphorous readily escapes from the film when a sample is annealed at 300°C for 15 minutes, and the major reaction products are the ψ phase (Au3In2) and another intermetallic compound that is probably AuIn. The presence of an inert gas creates a kinetic barrier for the escape of phosphorous from the surface, and thus Au/InP behaves more like a closed thermodynamic system under pressure than in a vacuum.

published proceedings

  • MRS Proceedings

author list (cited authors)

  • Williams, R. S., Tsai, C. T., & Cirlin, E.

citation count

  • 0

complete list of authors

  • Williams, R Stanley||Tsai, C Thomas||Cirlin, Eun-Hee

publication date

  • January 1986