Chemical Reactions at the in Vacuo Au/Inp Interface Academic Article uri icon


  • ABSTRACTThe reaction between a Au film and an Inp substrate occurs much more readily in vacuo than under an external pressure of an inert ga. At atmospheric pressure, the compounds Au2P3 and the intermetallic compound (at times designated Au7In3, Au9In4, or Au2In) are formed at 450 C and remain fairly stable even when annealed at 500C for hours. Under ultra-high vacuum conditions, phosphorous readily escapes from the film when a sample is annealed at 300C for 15 minutes, and the major reaction products are the phase (Au3In2) and another intermetallic compound that is probably AuIn. The presence of an inert gas creates a kinetic barrier for the escape of phosphorous from the surface, and thus Au/InP behaves more like a closed thermodynamic system under pressure than in a vacuum.

published proceedings

  • MRS Advances

author list (cited authors)

  • Williams, R. S., Tsai, C. T., & Cirlin, E.

citation count

  • 0

complete list of authors

  • Williams, R Stanley||Tsai, C Thomas||Cirlin, Eun-Hee

publication date

  • January 1986