Electrical Properties of Thin Intermetallic Platinum-Gallium Films Grown by MBE on Gallium Arsenide and Silicon. Academic Article

abstract

• ABSTRACTThin films of the platinum-gallium (Pt-Ga) family have been grown on gallium arsenide (GaAs) and silicon (Si) by molecular beam epitaxy (MBE). A partial list of potential uses for these and similar structures is high temperature stable photodetectors, Schottky andOhmic contacts, epitaxial buried contacts, and field effect transistors. In this work the electrical properties of Pt2Ga, PtGa, and PtGa2 on both GaAs andSi will be presented. The resistivity of these thin films has been found to depend on the crystal quality and phase of the material.

authors

• Williams, R. Stanley

published proceedings

• MRS Advances

author list (cited authors)

• Sadwick, L. P., Ostrom, R. M., Wu, B. J., Wang, K. L., & Williams, R. S.

citation count

• 0

publication date

• January 1989

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/proc-148-291

start page

• 291

volume

• 148

URL

• http://dx.doi.org/10.1557/proc-148-291