Electrical Properties of Thin Intermetallic Platinum-Gallium Films Grown by MBE on Gallium Arsenide and Silicon. Academic Article uri icon


  • ABSTRACTThin films of the platinum-gallium (Pt-Ga) family have been grown on gallium arsenide (GaAs) and silicon (Si) by molecular beam epitaxy (MBE). A partial list of potential uses for these and similar structures is high temperature stable photodetectors, Schottky andOhmic contacts, epitaxial buried contacts, and field effect transistors. In this work the electrical properties of Pt2Ga, PtGa, and PtGa2 on both GaAs andSi will be presented. The resistivity of these thin films has been found to depend on the crystal quality and phase of the material.

published proceedings

  • MRS Advances

author list (cited authors)

  • Sadwick, L. P., Ostrom, R. M., Wu, B. J., Wang, K. L., & Williams, R. S.

citation count

  • 0

complete list of authors

  • Sadwick, LP||Ostrom, RM||Wu, BJ||Wang, KL||Williams, RS

publication date

  • January 1989