Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide Academic Article

abstract

• ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450C and 600C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200C to form phases with higher Ga concentration.

authors

• Williams, R. Stanley

published proceedings

• MRS Advances

author list (cited authors)

• Kim, Y. K., Shuh, D. K., Williams, R. S., Sadwick, L. P., & Wang, K. L.

citation count

• 1

publication date

• 1989

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 34 Chemical Sciences
• 3402 Inorganic Chemistry

Digital Object Identifier (DOI)

• 10.1557/proc-148-15

start page

• 15

volume

• 148

URL

• http://dx.doi.org/10.1557/proc-148-15