Impact of geometry on the performance of memristive nanodevices. Academic Article

abstract

• We examined the influence of memristor geometry on switching endurance by comparing ribbed and planar TiO(2)-based cross-point devices with 50 nm 50 nm lateral dimensions. We observed that planar devices exhibited a factor of over four improvement in median endurance value over ribbed structures for otherwise identical structures. Our simulations indicated that the corners in the upper wires of the ribbed devices experienced higher current density and more heating during device forming and switching, and hence a shorter life time.

authors

• Williams, R. Stanley

published proceedings

• Nanotechnology

altmetric score

• 3

author list (cited authors)

• Xia, Q., Pickett, M. D., Yang, J. J., Zhang, M., Borghetti, J., Li, X., ... Williams, R. S.

citation count

• 28

complete list of authors

• Xia, Qiangfei||Pickett, Matthew D||Yang, J Joshua||Zhang, M-X||Borghetti, Julien||Li, Xuema||Wu, Wei||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

• June 2011

publisher

• IOP Publishing  Publisher

published in

• Nanotechnology  Journal

keywords

• 0912 Materials Engineering

PubMed Central ID

• 21572201

Digital Object Identifier (DOI)

• 10.1088/0957-4484/22/25/254026

start page

• 254026

end page

• 254026

volume

• 22

issue

• 25

URL

• http://dx.doi.org/10.1088/0957-4484/22/25/254026