Engineering nonlinearity into memristors for passive crossbar applications Academic Article uri icon

abstract

  • Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO2-x/TaOx oxide heterostructure incorporated into a 50nm50nm memristor displays a very large nonlinearity such that I(V/2)I(V)/100 for V1 volt, which is caused by current-controlled negative differential resistance in the device.

published proceedings

  • APPLIED PHYSICS LETTERS

altmetric score

  • 3

author list (cited authors)

  • Yang, J. J., Zhang, M., Pickett, M. D., Miao, F., Strachan, J. P., Li, W., ... Williams, R. S.

citation count

  • 189

complete list of authors

  • Yang, J Joshua||Zhang, M-X||Pickett, Matthew D||Miao, Feng||Strachan, John Paul||Li, Wen-Di||Yi, Wei||Ohlberg, Douglas AA||Choi, Byung Joon||Wu, Wei||Nickel, Janice H||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

  • March 2012