State Dynamics and Modeling of Tantalum Oxide Memristors Academic Article

authors

• Williams, R. Stanley

published proceedings

• IEEE TRANSACTIONS ON ELECTRON DEVICES

author list (cited authors)

• Strachan, J. P., Torrezan, A. C., Miao, F., Pickett, M. D., Yang, J. J., Yi, W., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

• 164

complete list of authors

• Strachan, John Paul||Torrezan, Antonio C||Miao, Feng||Pickett, Matthew D||Yang, J Joshua||Yi, Wei||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

• July 2013

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Crossbar
• Device Dynamics
• Memristor
• Resistive Memory (rram)
• Spice

Digital Object Identifier (DOI)

• 10.1109/TED.2013.2264476

start page

• 2194

end page

• 2202

volume

• 60

issue

• 7

URL

• http://dx.doi.org/10.1109/ted.2013.2264476