High switching endurance in TaO_x memristive devices Academic Article

abstract

• We demonstrate over 11010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 3

author list (cited authors)

• Yang, J. J., Zhang, M., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

• 555

publication date

• December 2010

publisher

• AIP Publishing  Publisher

keywords

• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1063/1.3524521

start page

• 232102

volume

• 97

issue

• 23

URL

• http://dx.doi.org/10.1063/1.3524521