Two- and Three-Terminal Resistive Switches: Nanometer-Scale Memristors and Memistors Academic Article

abstract

• AbstractThe logical relationship between two previously defined memory resistors is revealed by constructing and experimentally demonstrating a threeterminal memistor equivalent circuit using two twoterminal memristors. A technique is then presented, using nanoimprint lithography in combination with angle evaporation, to fabricate a single nanoscale device with a footprint of 4F2, where F is the minimum lithographic feature size, that can be operated as either a twoterminal lateral memristor or a threeterminal memistor inside a crossbar structure. These devices exhibit repeatable bipolar nonvolatile switching behavior with up to 103 ON/OFF conductance ratios, as well as the desired threeterminal behavior.

authors

• Williams, R. Stanley

published proceedings

• ADVANCED FUNCTIONAL MATERIALS

altmetric score

• 3

author list (cited authors)

• Xia, Q., Pickett, M. D., Yang, J. J., Li, X., Wu, W., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

• 74

complete list of authors

• Xia, Qiangfei||Pickett, Matthew D||Yang, J Joshua||Li, Xuema||Wu, Wei||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

• July 2011

publisher

• Wiley  Publisher

keywords

• 40 Engineering
• 4018 Nanotechnology
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1002/adfm.201100180

start page

• 2660

end page

• 2665

volume

• 21

issue

• 14

URL

• http://dx.doi.org/10.1002/adfm.201100180