High-Speed and Low-Energy Nitride Memristors Academic Article uri icon

abstract

  • Highperformance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (85 ps for microdevices with waveguide) and relatively low switching current (15 A for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Alrich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

published proceedings

  • ADVANCED FUNCTIONAL MATERIALS

altmetric score

  • 0.5

author list (cited authors)

  • Choi, B. J., Torrezan, A. C., Strachan, J. P., Kotula, P. G., Lohn, A. J., Marinella, M. J., ... Yang, J. J.

citation count

  • 267

complete list of authors

  • Choi, Byung Joon||Torrezan, Antonio C||Strachan, John Paul||Kotula, PG||Lohn, AJ||Marinella, Matthew J||Li, Zhiyong||Williams, R Stanley||Yang, J Joshua

publication date

  • August 2016

publisher