Force modulation of tunnel gaps in metal oxide memristive nanoswitches Academic Article uri icon

abstract

  • Electron tunneling plays a key role in computing devices. Tunneling is, however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with 10nm lateral resolution. By modulating tunnel gaps in Pt/TiOx/Pt memristive oxide nanoswitches, we establish that these devices switch via 29 modification of the tunnel gap.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Miao, F., Yang, J. J., Strachan, J. P., Stewart, D., Williams, R. S., & Lau, C. N.

citation count

  • 38

complete list of authors

  • Miao, Feng||Yang, J Joshua||Strachan, John Paul||Stewart, Duncan||Williams, R Stanley||Lau, Chun Ning

publication date

  • September 2009