Direct measurement of strain in a Ge island on Si(001) Academic Article uri icon

abstract

  • We report on a direct measurement of the strain in a single Ge quantum dot island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.860.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Miller, P. D., Liu, C. P., Henstrom, W. L., Gibson, J. M., Huang, Y., Zhang, P., ... Williams, R. S.

citation count

  • 39

publication date

  • July 1999