Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application. Academic Article uri icon

abstract

  • A Pt/NbOx/TiOy/NbOx/TiN stack integrated on a 30 nm contact via shows a programming current as low as 10 nA and 1 pA for the set and reset switching, respectively, and a self-rectifying ratio as high as ∼105, which are suitable characteristics for low-power memristor applications. It also shows a forming-free characteristic. A charge-trap-associated switching model is proposed to account for this self-rectifying memrisive behavior. In addition, an asymmetric voltage scheme (AVS) to decrease the write power consumption by utilizing this self-rectifying memristor is also described. When the device is used in a 1000 × 1000 crossbar array with the AVS, the programming power can be decreased to 8.0% of the power consumption of a conventional biasing scheme. If the AVS is combined with a nonlinear selector, a power consumption reduction to 0.31% of the reference value is possible.

published proceedings

  • Nano Lett

altmetric score

  • 16.848

author list (cited authors)

  • Kim, K. M., Zhang, J., Graves, C., Yang, J. J., Choi, B. J., Hwang, C. S., Li, Z., & Williams, R. S.

citation count

  • 124

complete list of authors

  • Kim, Kyung Min||Zhang, Jiaming||Graves, Catherine||Yang, J Joshua||Choi, Byung Joon||Hwang, Cheol Seong||Li, Zhiyong||Williams, R Stanley

publication date

  • October 2016