Equilibrium model of bimodal distributions of epitaxial island growth. Academic Article

abstract

• We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.

authors

• Williams, R. Stanley

published proceedings

• Phys Rev Lett

author list (cited authors)

• Rudd, R. E., Briggs, G., Sutton, A. P., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

• 69

complete list of authors

• Rudd, Robert E||Briggs, GAD||Sutton, AP||Medeiros-Ribeiro, G||Williams, R Stanley

publication date

• April 2003

publisher

• American Physical Society (APS)  Publisher

published in

• Physical Review Letters  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1103/PhysRevLett.90.146101

start page

• 146101

volume

• 90

issue

• 14

URL

• http://dx.doi.org/10.1103/physrevlett.90.146101