Equilibrium model of bimodal distributions of epitaxial island growth. Academic Article uri icon


  • We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.

published proceedings

  • Phys Rev Lett

author list (cited authors)

  • Rudd, R. E., Briggs, G., Sutton, A. P., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

  • 69

complete list of authors

  • Rudd, Robert E||Briggs, GAD||Sutton, AP||Medeiros-Ribeiro, G||Williams, R Stanley

publication date

  • April 2003