Equilibrium model of bimodal distributions of epitaxial island growth.
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We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.
author list (cited authors)
Rudd, R. E., Briggs, G., Sutton, A. P., Medeiros-Ribeiro, G., & Williams, R. S.
complete list of authors
Rudd, Robert E||Briggs, GAD||Sutton, AP||Medeiros-Ribeiro, G||Williams, R Stanley