Radiation Hardness of TiO₂ Memristive Junctions Academic Article

authors

• Williams, R. Stanley

published proceedings

• IEEE TRANSACTIONS ON NUCLEAR SCIENCE

altmetric score

• 0.85

author list (cited authors)

• Tong, W. M., Yang, J. J., Kuekes, P. J., Stewart, D. R., Williams, R. S., DeIonno, E., ... Osborn, J. V.

citation count

• 64

complete list of authors

• Tong, William M||Yang, J Joshua||Kuekes, Philip J||Stewart, Duncan R||Williams, R Stanley||DeIonno, Erica||King, Everett E||Witczak, Steven C||Looper, Mark D||Osborn, Jon V

publication date

• June 2010

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE TRANSACTIONS ON NUCLEAR SCIENCE  Journal

keywords

• Memristor
• Non-volatie Memory
• Rad-hard
• Titanium Oxide

Digital Object Identifier (DOI)

• 10.1109/TNS.2010.2045768

start page

• 1640

end page

• 1643

volume

• 57

issue

• 3

URL

• http://dx.doi.org/10.1109/tns.2010.2045768