Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.
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We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ per bit per μm2), low read-power (∼nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.
author list (cited authors)
Kumar, S., Davila, N., Wang, Z., Huang, X., Strachan, J. P., Vine, D., ... Stanley Williams, R.
complete list of authors
Kumar, Suhas||Davila, Noraica||Wang, Ziwen||Huang, Xiaopeng||Strachan, John Paul||Vine, David||David Kilcoyne, AL||Nishi, Yoshio||Stanley Williams, R