Oxygen migration during resistance switching and failure of hafnium oxide memristors Academic Article uri icon

abstract

  • While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Here, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfOx memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.

published proceedings

  • APPLIED PHYSICS LETTERS

altmetric score

  • 2.5

author list (cited authors)

  • Kumar, S., Wang, Z., Huang, X., Kumari, N., Davila, N., Strachan, J. P., ... Williams, R. S.

citation count

  • 63

complete list of authors

  • Kumar, Suhas||Wang, Ziwen||Huang, Xiaopeng||Kumari, Niru||Davila, Noraica||Strachan, John Paul||Vine, David||Kilcoyne, AL David||Nishi, Yoshio||Williams, R Stanley

publication date

  • March 2017