TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU/(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER Academic Article uri icon

abstract

  • Ballistic electron emission microscopy (BEEM) has been used to investigate the effects of a thin interfacial native oxide layer on the electronic properties and stability of a Au/(100) n-GaAs contact as a function of time. The oxide had no effect on the electronic band structure at the interface measured with BEEM, as compared to similar contacts without a diffusion barrier. In addition, the oxide greatly enhanced the electrical homogeneity of the interface and prolonged the ability of the diode to transmit ballistic electrons to more than 35 days.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • TALIN, A. A., OHLBERG, D., WILLIAMS, R. S., SULLIVAN, P., KOUTSELAS, I., WILLIAMS, B., & KAVANAGH, K. L.

citation count

  • 26

publication date

  • June 1993