A physical model of switching dynamics in tantalum oxide memristive devices Academic Article

abstract

• We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 0.25

author list (cited authors)

• Mickel, P. R., Lohn, A. J., Choi, B. J., Yang, J. J., Zhang, M., Marinella, M. J., James, C. D., & Williams, R. S.

citation count

• 67

publication date

• June 2013

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4018 Nanotechnology
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1063/1.4809530

start page

• 223502

volume

• 102

issue

• 22

URL

• http://dx.doi.org/10.1063/1.4809530