Molecular dynamics simulations of oxide memory resistors (memristors). Academic Article

abstract

• Reversible bipolar nanoswitches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion. The simulations show that the 'localized conductive filaments' and 'uniform push/pull' models for memristive switching are actually two extremes of the one stochastic mechanism.

authors

• Williams, R. Stanley

published proceedings

• Nanotechnology

author list (cited authors)

• Savel'ev, S. E., Alexandrov, A. S., Bratkovsky, A. M., & Williams, R. S.

citation count

• 34

complete list of authors

• Savel'ev, SE||Alexandrov, AS||Bratkovsky, AM||Williams, R Stanley

publication date

• June 2011

publisher

• IOP Publishing  Publisher

published in

• Nanotechnology  Journal

keywords

• 0307 Theoretical And Computational Chemistry

PubMed Central ID

• 21572187

Digital Object Identifier (DOI)

• 10.1088/0957-4484/22/25/254011

start page

• 254011

end page

• 254011

volume

• 22

issue

• 25

URL

• http://dx.doi.org/10.1088/0957-4484/22/25/254011