Mechanical properties of self-welded silicon nanobridges
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abstract
Mechanical properties of self-welded [111] single-crystal silicon nanowire bridges grown between two silicon posts using metal-catalyzed chemical vapor deposition were determined using both dynamic and static measurements. The static tests were carried out using atomic force microscopy (AFM) to measure the nanowires Youngs modulus and the strength of the self-welded junctions. The AFM-measured Youngs modulus ranged from 93 to 250 GPa (compared to 185 GPa for bulk silicon in the [111] direction) depending on the nanowire diameter, which ranged from 140 to 200 nm. The self-welded wire could withstand a maximum bending stress in the range of 210830 MPa (larger than bulk silicon), which also depended on the nanowire diameter and loading conditions. The beam broke close to the loading point, rather than at the self-welded junction, indicating the excellent bond strength of the self-welded junction. The vibration spectra measured with a network analyzer and a dc magnetic field indicated a dynamic Youngs modulus of 140 GPa, in good agreement (within the experimental error) with the static measurement results.
