The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces Academic Article uri icon


  • Thin AuGa2 films were grown by codeposition from separate Au and Ga evaporation sources on clean GaAs(001) substrates in ultrahigh vacuum, and were studied by Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, scanning electron microscopy, and x-ray diffractometry. The morphology and crystallinity of the AuGa2 were highly dependent upon the film deposition and annealing history. Films grown on room-temperature substrates were continuous, specular, and polycrystalline, but the dominant orientation was with the (001) planes of the crystallites parallel to the substrate surface. Annealing to temperatures between 300and 480C caused the film to break up and coalesce into rectangular crystallites, which were all oriented with (001) parallel to the surface. An anneal to 500C, which is above the AuGa2 melting point, resulted in the formation of irregular polycrystalline islands of AuGa2 on the GaAs(001) substrate. No interface roughening or chemical reactions between the film and substrate or interface were observed for even the highest-temperature anneals.

published proceedings


altmetric score

  • 3

author list (cited authors)

  • Lince, J. R., Tsai, C. T., & Williams, R. S.

citation count

  • 32

complete list of authors

  • Lince, Jeffrey R||Tsai, C Thomas||Williams, R Stanley

publication date

  • August 1986