History Erase Effect in a Non-Volatile Memristor Academic Article

authors

• Williams, R. Stanley

published proceedings

• IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

author list (cited authors)

• Ascoli, A., Tetzlaff, R., Chua, L. O., Strachan, J. P., & Williams, R. S.

citation count

• 51

publication date

• March 2016

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• Device Model
• Fading Memory
• Nonlinear Dynamics
• Tantalum Oxide Memristor

Digital Object Identifier (DOI)

• 10.1109/TCSI.2016.2525043

start page

• 389

end page

• 400

volume

• 63

issue

• 3

URL

• http://dx.doi.org/10.1109/tcsi.2016.2525043