ORGANOMETALLIC VAPOR-PHASE EPITAXY OF COGA ON (100)GAAS
Academic Article
Overview
Research
Identity
Additional Document Info
Other
View All
Overview
abstract
We report the first epitaxial growth of CoGa thin films on (100)GaAs substrates by organometallic chemical vapor deposition. The separate sources (5-C5H5)Co(CO)2 and Et3Ga were mixed in a stream of carrier gas and decomposed in a conventional cold wall epitaxial reactor between 260 and 300C under atmospheric pressure. A typical growth rate of 1 m/h was achieved and the film composition could be directly monitored from the gas phase composition. The Co-rich films have the -Co metal structure and react with GaAs at 500C to form CoAs. By contrast, Ga-rich -CoGa films were lattice matched on (100)GaAs and were found to be thermodynamically stable at 500C. This work demonstrates that organometallic vapor phase epitaxy is also a suitable technique for the fabrication of buried metal/semiconductor heterostructures.
