Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Academic Article

abstract

• By choosing a material that has an appropriate asymmetric lattice mismatch to the host substrate, in this case ErSi2 on Si(001), it is possible to grow one-dimensional epitaxial crystals. ErSi2 nanowires are less than one nanometer high, a few nanometers wide, close to a micron long, crystallographically aligned to 110Si directions, straight, and atomically regular.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 6

author list (cited authors)

• Chen, Y., Ohlberg, D., Medeiros-Ribeiro, G., Chang, Y. A., & Williams, R. S.

citation count

• 248

publication date

• June 2000

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1063/1.126848

start page

• 4004

end page

• 4006

volume

• 76

issue

• 26

URL

• http://dx.doi.org/10.1063/1.126848