Analog memory capacitor based on field-configurable ion-doped polymers Academic Article uri icon

abstract

  • A memory capacitor based on a field-configurable ion-doped polymer is reported. The device can be dynamically and reversibly programed to analog capacitances with low-voltage (>5V) pulses. After the device is programed to a specific value, its capacitance remains nonvolatile. The field-configurable capacitance is attributed to the modification of ionic dopant concentrations in the polymer. The memory capacitors might be used for analog memory, nonlinear analog, and neuromorphic circuits.

published proceedings

  • APPLIED PHYSICS LETTERS

altmetric score

  • 3

author list (cited authors)

  • Lai, Q., Zhang, L., Li, Z., Stickle, W. F., Williams, R. S., & Chen, Y.

citation count

  • 34

complete list of authors

  • Lai, Qianxi||Zhang, Lei||Li, Zhiyong||Stickle, William F||Williams, R Stanley||Chen, Yong

publication date

  • November 2009