Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting Academic Article

abstract

• Strain energy from the lattice mismatch of a heteroepitaxial system can create self-assembled, single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by nanoimprinting using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process, causing the islands to form at the patterned features. The resulting regular array of very small islands may be useful for future devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 3

author list (cited authors)

• Kamins, T. I., Ohlberg, D., Williams, R. S., Zhang, W., & Chou, S. Y.

citation count

• 60

publication date

• March 1999

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering

Digital Object Identifier (DOI)

• 10.1063/1.123683

start page

• 1773

end page

• 1775

volume

• 74

issue

• 12

URL

• http://dx.doi.org/10.1063/1.123683