Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures Academic Article uri icon

abstract

  • Using polarized Raman spectroscopy, we examine different vibrational modes (i.e., SiSi, SiGe, and GeGe) in Si/Ge self-organized nanostructures. Here, we present unambiguous proof that multilayers of Ge nanometer-size, dome-shaped islands grown on a 100 Si substrate are nearly fully relaxed and that the built-in strain field is substantially localized in the surrounding Si matrix. In contrast, multilayers with pyramid-shaped islands do not show observable relaxation. The large strain in the Si layers of the multilayer dome samples correlates with the greater self-organization in these structures compared to the multilayer pyramid samples.

published proceedings

  • APPLIED PHYSICS LETTERS

altmetric score

  • 3

author list (cited authors)

  • Kamenev, B. V., Grebel, H., Tsybeskov, L., Kamins, T. I., Williams, R. S., Baribeau, J. M., & Lockwood, D. J.

citation count

  • 25

complete list of authors

  • Kamenev, BV||Grebel, H||Tsybeskov, L||Kamins, TI||Williams, RS||Baribeau, JM||Lockwood, DJ

publication date

  • December 2003