THERMODYNAMICALLY STABLE CONDUCTING FILMS OF INTERMETALLIC PTGA2 ON GALLIUM-ARSENIDE Conference Paper

abstract

• ABSTRACTThe first epitaxial platinum gallium two (PtGa2) films have been grown on gallium arsenide (GaAs) (100) by co-evaporation of the elements under ultra-high vacuum conditions. An electron beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs (100). This study supports the contention that PtGa2 can be a suitable, temperature stable contact material on GaAs substrates.

authors

• Williams, R. Stanley

published proceedings

• ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS

author list (cited authors)

• SADWICK, L. P., WANG, K. L., SHUH, D. K., KIM, Y. K., & WILLIAMS, R. S.

citation count

• 0

complete list of authors

• SADWICK, LP||WANG, KL||SHUH, DK||KIM, YK||WILLIAMS, RS

publication date

• January 1989

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 34 Chemical Sciences
• 3402 Inorganic Chemistry

Digital Object Identifier (DOI)

• 10.1557/proc-144-595

International Standard Book Number (ISBN) 10

• 1-55899-017-8

start page

• 595

end page

• 600

volume

• 144

URL

• http://dx.doi.org/10.1557/proc-144-595