Low Temperature Film Growth by Supersonic Jets of CBr4 Conference Paper uri icon

abstract

  • AbstractPulsed, supersonic jets of CBr4 seeded in a hydrogen bath gas have been used to deposit films on silicon at low temperatures (c A. 100° C) in a high vacuum chamber. IN situ analysis of the films using x-ray photoelectron spectroscopy (XPS) and depth profiling indicate a surface composition of 34% Br and 66 % C and a bulk composition of 88% C and 12% Br. the deposition efficiency of CBr4 was found to drop dramatically when seeded in bath gases of deuterium, helium, and argon, suggesting that the film growth is an activated process, requiring precursor energies of at least 3.6 eV.

author list (cited authors)

  • Ohlberg, D., Rose, G., Ren, J., & Williams, R. S.

publication date

  • January 1, 1995 11:11 AM