Low temperature film growth by supersonic jets of CBr4 Conference Paper

abstract

• AbstractPulsed, supersonic jets of CBr4 seeded in a hydrogen bath gas have been used to deposit films on silicon at low temperatures (c A. 100 C) in a high vacuum chamber. IN situ analysis of the films using x-ray photoelectron spectroscopy (XPS) and depth profiling indicate a surface composition of 34% Br and 66 % C and a bulk composition of 88% C and 12% Br. the deposition efficiency of CBr4 was found to drop dramatically when seeded in bath gases of deuterium, helium, and argon, suggesting that the film growth is an activated process, requiring precursor energies of at least 3.6 eV.

authors

• Williams, R. Stanley

published proceedings

• FILM SYNTHESIS AND GROWTH USING ENERGETIC BEAMS

author list (cited authors)

• Ohlberg, D., Rose, C., Ren, J., & Williams, R. S.

citation count

• 1

complete list of authors

• Ohlberg, DAA||Rose, C||Ren, J||Williams, RS

publication date

• 1995

publisher

• Springer Nature  Publisher

published in

• MRS Online Proceedings Library  Journal

keywords

• 34 Chemical Sciences
• 3406 Physical Chemistry

Digital Object Identifier (DOI)

• 10.1557/PROC-388-233

International Standard Book Number (ISBN) 10

• 1-55899-291-X

start page

• 233

end page

• 238

volume

• 388

URL

• http://dx.doi.org/10.1557/proc-388-233