DETERMINATION OF SUBSTITUTIONAL DOPANT AND HOLE CONCENTRATIONS IN ZN-DIFFUSED SINGLE-CRYSTAL INP Academic Article

abstract

• Proton-induced x-ray emission combined with channeling techniques has been used to evaluate Zn-diffused InP crystals. The measurements showed that the total Zn concentration was (1.00.3)1019/cm3 with 505% of the dopant residing on lattice sites for samples prepared by sealed-ampoule diffusion at 700C with a P overpressure. Hall measurements yielded a hole concentration of (5.00.5)1018/cm3, indicating that most of the substitutional Zn in InP is electrically active and not associated in neutral substitutional complexes as previously suggested. Fine precipitates observed by transmission electron microscopy are assumed to contain the nonsubstitutional Zn.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• WILLIAMS, R. S., BARNES, P. A., & FELDMAN, L. C.

citation count

• 24

publication date

• May 1980

publisher

• AIP Publishing  Publisher

keywords

• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1063/1.91642

start page

• 760

end page

• 762

volume

• 36

issue

• 9

URL

• http://dx.doi.org/10.1063/1.91642