BOROSILICATE GLASS-FILMS FOR INP ENCAPSULATION Academic Article

abstract

• rf-sputtered borosilicate glass films were evaluated for surface protection of InP. The films, which have a thermal expansion coefficient much closer to InP than SiO2 or Si3N4, were usable up to 750C without cracking or peeling, and were also found to be effective masks for diffusion of Zn up to 650C and InP background doping in the 11016/cm range. The films were also found to be stable with respect to leaching of glass components by boiling water. Sputtered borosilicate glass films thus offer advantages over the use of SiO2, Si3N4 or phosphosilicate glass for use as an encapsulant on InP.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• SINGH, S., BONNER, W. A., CAMLIBEL, I., GRODKIEWICZ, W. H., KYLE, T. R., PASTEUR, G., VANUITERT, L. G., & WILLIAMS, R. S.

citation count

• 4

publication date

• March 1981

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1063/1.92373

start page

• 349

end page

• 352

volume

• 38

issue

• 5

URL

• http://dx.doi.org/10.1063/1.92373