Chemical vapor deposition of Si nanowires nucleated by TiSi₂ islands on Si Academic Article

abstract

• Silicon nanowires can be formed by chemical vapor deposition of Si onto Si substrates on which nanometer-scale, Ti-containing islands have been grown. At the growth temperatures used, the Ti-containing islands remain solid and anchored to the substrate, while the Si nanowires grow out from the islands, which remain at their bases. The nanowire growth mechanism, therefore, differs from the usual vapor-liquid-solid process and provides a potential route for the formation of oriented Si nanostructures or semiconductor-metal-semiconductor structures compatible with Si integrated circuits.

authors

• Williams, R. Stanley

published proceedings

• APPLIED PHYSICS LETTERS

altmetric score

• 3

author list (cited authors)

• Kamins, T. I., Williams, R. S., Chen, Y., Chang, Y. L., & Chang, Y. A.

citation count

• 146

publication date

• January 2000

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4018 Nanotechnology
• 51 Physical Sciences
• 5104 Condensed Matter Physics
• Bioengineering
• Nanotechnology

Digital Object Identifier (DOI)

• 10.1063/1.125852

start page

• 562

end page

• 564

volume

• 76

issue

• 5

URL

• http://dx.doi.org/10.1063/1.125852