Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.
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High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.
author list (cited authors)
Jung, G., Johnston-Halperin, E., Wu, W., Yu, Z., Wang, S., Tong, W. M., ... Williams, R. S.
complete list of authors
Jung, Gun-Young||Johnston-Halperin, Ezekiel||Wu, Wei||Yu, Zhaoning||Wang, Shih-Yuan||Tong, William M||Li, Zhiyong||Green, Jonathan E||Sheriff, Bonnie A||Boukai, Akram||Bunimovich, Yuri||Heath, James R||Williams, R Stanley