Sub-10 nm nanoimprint lithography by wafer bowing.
Additional Document Info
We introduce the concept of wafer bowing to affect nanoimprinting. This approach allows a design that can fit the key imprinting mechanism into a compact module, which we have constructed and demonstrated with an overlay and resolution of <0.5 microm and <10 nm, respectively. In the short term, this wafer bowing approach makes nanoimprint lithography much more accessible to a broad range of researchers. More importantly, this approach eliminates machine movement other than wafer bowing and shortens the mechanical path; these will enable the achievement of excellent patterning and overlay at a much lower cost. In the long term, wafer bowing is extensible to step-and-repeat printing for volume manufacturing.
Wu, W., Tong, W. M., Bartman, J., Chen, Y., Walmsley, R., Yu, Z., ... Williams, R. S.
complete list of authors
Wu, Wei||Tong, William M||Bartman, Jonathan||Chen, Yufeng||Walmsley, Robert||Yu, Zhaoning||Xia, Qiangfei||Park, Inkyu||Picciotto, Carl||Gao, Jun||Wang, Shih-Yuan||Morecroft, Deborah||Yang, Joel||Berggren, Karl K||Williams, R Stanley