Sub-10 nm nanoimprint lithography by wafer bowing.
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We introduce the concept of wafer bowing to affect nanoimprinting. This approach allows a design that can fit the key imprinting mechanism into a compact module, which we have constructed and demonstrated with an overlay and resolution of <0.5 microm and <10 nm, respectively. In the short term, this wafer bowing approach makes nanoimprint lithography much more accessible to a broad range of researchers. More importantly, this approach eliminates machine movement other than wafer bowing and shortens the mechanical path; these will enable the achievement of excellent patterning and overlay at a much lower cost. In the long term, wafer bowing is extensible to step-and-repeat printing for volume manufacturing.
author list (cited authors)
Wu, W., Tong, W. M., Bartman, J., Chen, Y., Walmsley, R., Yu, Z., ... Williams, R. S.
complete list of authors
Wu, Wei||Tong, William M||Bartman, Jonathan||Chen, Yufeng||Walmsley, Robert||Yu, Zhaoning||Xia, Qiangfei||Park, Inkyu||Picciotto, Carl||Gao, Jun||Wang, Shih-Yuan||Morecroft, Deborah||Yang, Joel||Berggren, Karl K||Williams, R Stanley