Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.
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By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
author list (cited authors)
Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., ... Williams, R. S.
complete list of authors
Miao, Feng||Strachan, John Paul||Yang, J Joshua||Zhang, Min-Xian||Goldfarb, Ilan||Torrezan, Antonio C||Eschbach, Peter||Kelley, Ronald D||Medeiros-Ribeiro, Gilberto||Williams, R Stanley