Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor. uri icon

abstract

  • By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

published proceedings

  • Adv Mater

altmetric score

  • 3

author list (cited authors)

  • Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., ... Williams, R. S.

citation count

  • 372

complete list of authors

  • Miao, Feng||Strachan, John Paul||Yang, J Joshua||Zhang, Min-Xian||Goldfarb, Ilan||Torrezan, Antonio C||Eschbach, Peter||Kelley, Ronald D||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

  • December 2011

publisher