Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
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By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
author list (cited authors)
Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., ... Williams, R. S.