Continuous electrical tuning of the chemical composition of TaO(x)-based memristors.
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TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.
author list (cited authors)
Miao, F., Yi, W., Goldfarb, I., Yang, J. J., Zhang, M., Pickett, M. D., ... Williams, R. S.
complete list of authors
Miao, Feng||Yi, Wei||Goldfarb, Ilan||Yang, J Joshua||Zhang, Min-Xian||Pickett, Matthew D||Strachan, John Paul||Medeiros-Ribeiro, Gilberto||Williams, R Stanley