Continuous electrical tuning of the chemical composition of TaO(x)-based memristors. Academic Article uri icon

abstract

  • TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.

published proceedings

  • ACS Nano

altmetric score

  • 6

author list (cited authors)

  • Miao, F., Yi, W., Goldfarb, I., Yang, J. J., Zhang, M., Pickett, M. D., ... Williams, R. S.

citation count

  • 105

complete list of authors

  • Miao, Feng||Yi, Wei||Goldfarb, Ilan||Yang, J Joshua||Zhang, Min-Xian||Pickett, Matthew D||Strachan, John Paul||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

  • March 2012