Entropy-driven loss of gas phase group V species from gold/III-V compound semiconductor systems Academic Article

abstract

• Temperature-dependent chemical interactions between Au and nine III-V compound semiconductors (III = Al,Ga,In and V = P,As,Sb) have been calculated using bulk thermodynamic properties. Enthalpic considerations alone are insufficient to predict metal/ compound semiconductor reactivities. The entropy of vaporization of the group V elements is shown to be an extremely important driving force for chemical reactions involving the III-V's, since it enables several endothermic reactions to occur spontaneously under certain temperature and pressure conditions. Plots of either Gibbs' free energies of reaction or equilibrium vapor pressure of the group V element versus temperature are used to predict critical reaction temperatures for each of the systems studied. These plots agree extremely well with previous experimental observations of thin film reactions of Au on GaAs.

authors

• Williams, R. Stanley

published proceedings

• JOURNAL OF MATERIALS RESEARCH

altmetric score

• 3

author list (cited authors)

• Pugh, J. H., & Williams, R. S.

citation count

• 57

publication date

• April 1986

publisher

• Springer Nature  Publisher

keywords

• 40 Engineering
• 4016 Materials Engineering
• 4017 Mechanical Engineering
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1557/JMR.1986.0343

start page

• 343

end page

• 351

volume

• 1

issue

• 2

URL

• http://dx.doi.org/10.1557/jmr.1986.0343