THIN FILMS OF SEMICONDUCTING SNSI ALLOYS GROWN BY PULSED LASER DEPOSITION Conference Paper uri icon

abstract

  • ABSTRACTSemiconducting SnxSi1x (0x0.6) thin-film alloys have been grown by pulsed laser deposition (PLD). These new materials are amorphous to X-rays and display small positive optical band gaps, suggesting potential applications in solar cells. The tin silicide films were grown by depositing very thin (130 ) alternating atomic layers from individual Sn and Si targets utilizing an automated multi-target holder coupled to a conventional PLD system. The value of x was selected by controlling the thickness of the atomic layers. The films were characterized by X-ray diffraction, optical absorption, Rutherford backscattering spectroscopy, temperature-dependent resistivity, and X-ray photoelectron spectroscopy. Tin segregation is prevented by keeping the Sn layer thickness below a critical value. Compositions beyond x > 0.6 led to semimetallic SnxSi1x films with tin crystallites.

published proceedings

  • MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS

author list (cited authors)

  • TREECE, R. E., HORWITZ, J. S., CHRISEY, D. B., TANG, J., & WILLIAMS, R. S.

citation count

  • 0

complete list of authors

  • TREECE, RE||HORWITZ, JS||CHRISEY, DB||TANG, J||WILLIAMS, RS

publication date

  • January 1995