Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures Academic Article uri icon

abstract

  • This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (wetting layer) formation; (2) three-dimensional island growth with a constant aspect ratio; (3) continued island growth with a constant diameter and increasing height; (4) rapid growth of larger, faceted islands. Ostwald ripening of the islands during continued heat treatment after terminating the deposition is slow compared to island formation and growth during deposition for the experimental conditions used.

published proceedings

  • JOURNAL OF APPLIED PHYSICS

altmetric score

  • 3

author list (cited authors)

  • Kamins, T. I., Carr, E. C., Williams, R. S., & Rosner, S. J.

citation count

  • 303

publication date

  • January 1997