An organic/Si nanowire hybrid field configurable transistor. Academic Article

abstract

• We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.

authors

• Williams, R. Stanley

published proceedings

• Nano Lett

altmetric score

• 3

author list (cited authors)

• Lai, Q., Li, Z., Zhang, L., Li, X., Stickle, W. F., Zhu, Z., ... Chen, Y.

citation count

• 34

complete list of authors

• Lai, Qianxi||Li, Zhiyong||Zhang, Lei||Li, Xuema||Stickle, William F||Zhu, Zuhua||Gu, Zhen||Kamins, Theodore I||Williams, R Stanley||Chen, Yong

publication date

• March 2008

publisher

• American Chemical Society (ACS)  Publisher

published in

• Nano Letters: a journal dedicated to nanoscience and nanotechnology  Journal

keywords

• 0912 Materials Engineering

PubMed Central ID

• 18266332

Digital Object Identifier (DOI)

• 10.1021/nl073112y

start page

• 876

end page

• 880

volume

• 8

issue

• 3

URL

• http://dx.doi.org/10.1021/nl073112y