Electric field enhancement between two Si microdisks.
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The field enhancement in the gap between two Si microdisks is theoretically investigated using the finite difference time domain method. We show that the electric field within this gap increases as the distance between the two disks decreases, and it can be enhanced by as much as two orders of magnitude. By perturbing the Si microdisks to force the field leakage into an ever smaller volume, the field enhancement can reach a value as high as 238 with a deep sub-wavelength mode volume. This behavior is comparable to what can be observed in gap plasmons between metal nanoparticles, but is produced here in purely dielectric structures.
author list (cited authors)
Sigalas, M. M., Fattal, D. A., Williams, R. S., Wang, S. Y., & Beausoleil, R. G.