Sub-nanosecond switching of a tantalum oxide memristor. Academic Article

abstract

• We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.

authors

• Williams, R. Stanley

published proceedings

• Nanotechnology

altmetric score

• 6

author list (cited authors)

• Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

• 541

complete list of authors

• Torrezan, Antonio C||Strachan, John Paul||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

• December 2011

publisher

• IOP Publishing  Publisher

published in

• Nanotechnology  Journal

keywords

• 0302 Inorganic Chemistry

PubMed Central ID

• 22071289

Digital Object Identifier (DOI)

• 10.1088/0957-4484/22/48/485203

start page

• 485203

end page

• 485203

volume

• 22

issue

• 48

URL

• http://dx.doi.org/10.1088/0957-4484/22/48/485203