Sub-nanosecond switching of a tantalum oxide memristor Academic Article uri icon

abstract

  • We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.

altmetric score

  • 6

author list (cited authors)

  • Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

  • 445

publication date

  • December 2011