Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Academic Article

abstract

• We measured the real-time switching of metal-oxide memristors with sub-nanosecond resolution and recorded the evolution of the current and voltage during both ON (set) and OFF (reset) events. From these we determined the dynamical behavior of the conductivity for different applied bias amplitudes. Quantitative analysis of the energy cost and switching dynamics showed 115 fJ for ON-switching and 13 pJ for OFF-switching when resistance change was limited to 200%. Results are presented that show a favorable scaling with speed in terms of energy cost and reducing unnecessary damage to the devices.

authors

• Williams, R. Stanley

published proceedings

• Nanotechnology

altmetric score

• 1

author list (cited authors)

• Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S.

citation count

• 100

complete list of authors

• Strachan, John Paul||Torrezan, Antonio C||Medeiros-Ribeiro, Gilberto||Williams, R Stanley

publication date

• December 2011

publisher

• IOP Publishing  Publisher

published in

• Nanotechnology  Journal

keywords

• 7 Affordable And Clean Energy

PubMed Central ID

• 22108243

Digital Object Identifier (DOI)

• 10.1088/0957-4484/22/50/505402

start page

• 505402

end page

• 505402

volume

• 22

issue

• 50

URL

• http://dx.doi.org/10.1088/0957-4484/22/50/505402

user-defined tag

• 7 Affordable and Clean Energy