Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Academic Article

abstract

• Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 10(7) cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

authors

• Williams, R. Stanley

published proceedings

• Nano Lett

altmetric score

• 3

author list (cited authors)

• Choi, B. J., Torrezan, A. C., Norris, K. J., Miao, F., Strachan, J. P., Zhang, M., ... Williams, R. S.

citation count

• 151

complete list of authors

• Choi, Byung Joon||Torrezan, Antonio C||Norris, Kate J||Miao, Feng||Strachan, John Paul||Zhang, Min-Xian||Ohlberg, Douglas AA||Kobayashi, Nobuhiko P||Yang, J Joshua||Williams, R Stanley

publication date

• July 2013

publisher

• American Chemical Society (ACS)  Publisher

published in

• Nano Letters  Journal

keywords

• Memristor
• Nanocomposite Materials
• Nanoelectronics
• Nanometallic Switch
• Resistive Switching Memory

PubMed Central ID

• 23746124

Digital Object Identifier (DOI)

• 10.1021/nl401283q

start page

• 3213

end page

• 3217

volume

• 13

issue

• 7

URL

• http://dx.doi.org/10.1021/nl401283q