Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si
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abstract
Nanoscale islands of Ti-Si were formed by chemical vapor deposition onto a Si substrate. The islands were deposited by the H2 reduction of TiCl4 either without or with a Si-containing gas added during deposition. The Ti deposition rate increases strongly with increasing deposition temperature below 690C, but it increases only slowly at higher temperatures. For a fixed deposition time at the lower temperatures, the number of islands after deposition changes only slowly as the amount of Ti deposited (and the deposition temperature) varies, but the number of Ti atoms in each island changes rapidly. Adding Si from the gas phase during deposition does not change the amount of Ti deposited, but it increases the height of the deposited islands above the substrate surface plane. The amount of Si-containing gas needed to form stoichiometric TiSi2 increases with decreasing deposition temperature. The island position can be controlled by depositing on a structured Si surface.
