Trilayer Tunnel Selectors for Memristor Memory Cells Academic Article uri icon

abstract

  • An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence.

altmetric score

  • 3

author list (cited authors)

  • Choi, B. J., Zhang, J., Norris, K., Gibson, G., Kim, K. M., Jackson, W., ... Williams, R. S.

citation count

  • 63

publication date

  • January 2016

publisher