Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor. Academic Article uri icon

abstract

  • The impact of a series resistor (R(S)) on the variability and endurance performance of memristor was studied in the TaO(x) memristive system. A dynamic voltage divider between the R(S) and memristor during both the set and the reset switching cycles can suppress the inherent irregularity of the voltage dropped on the memristor, resulting in a greatly reduced switching variability. By selecting the proper resistance value of R(S) for the set and reset cycles respectively, we observed a dramatically improved endurance of the TaO(x) memristor. Such a voltage divider effect can thus be critical for the memristor applications that require low variability, high endurance and fast speed.

published proceedings

  • Sci Rep

altmetric score

  • 0.25

author list (cited authors)

  • Kim, K. M., Yang, J. J., Strachan, J. P., Grafals, E. M., Ge, N., Melendez, N. D., Li, Z., & Williams, R. S.

citation count

  • 86

complete list of authors

  • Kim, Kyung Min||Yang, J Joshua||Strachan, John Paul||Grafals, Emmanuelle Merced||Ge, Ning||Melendez, Noraica Davila||Li, Zhiyong||Williams, R Stanley

publication date

  • April 2016